parameters irk.26 units i t(av) or i f(av) @ 85c i o(rms) (*) 60 a i tsm @ 50hz 400 a i fsm @ 60hz 420 a i 2 t @ 50hz 800 a 2 s @ 60hz 730 a 2 s i 2 t 8000 a 2 s v rrm range 400 to 1600 v t stg - 40 to 125 o c t j - 40 to125 o c (*) as ac switch. 27 a major ratings and characteristics 27 a add-a-pak tm gen v power modules thyristor/ diode and thyristor/ thyristor irk.26 series bulletin i27130 rev. g 10/02 1 www.irf.com features high voltage industrial standard package thick al metal die and double stick bonding thick copper baseplate ul e78996 approved 3500v rms isolating voltage mechanical description the generation v of add-a-pak module combine the excellent thermal performance obtained by the usage of direct bonded copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid copper baseplate at the bottom side of the device. the cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. the generation v of aap module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. benefits up to 1600v full compatible to-240aa high surge capability easy mounting on heatsink al 2 0 3 dbc insulator heatsink grounded electrical description these modules are intended for general purpose high voltage applications such as high voltage regu- lated power supplies, lighting circuits, temperature and motor speed control circuits, ups and battery charger. the electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other ir modules.
irk.26 series 2 bulletin i27130 rev. g 10/02 www.irf.com v rrm , maximum v rsm , maximum v drm , max. repetitive i rrm voltage repetitive non-repetitive peak off-state voltage, i drm code peak reverse voltage peak reverse voltage gate open circuit 125c -vvvma 04 400 500 400 06 600 700 600 08 800 900 800 irk.26 10 1000 1100 1000 15 12 1200 1300 1200 14 1400 1500 1400 16 1600 1700 1600 i t(av) max. average on-state current (thyristors) 27 180 o conduction, half sine wave, i f(av) max. average forward 27 t c = 85 o c current (diodes) i o(rms ) max. continuous rms on-state current. as ac switch i tsm max. peak, one cycle 400 t=10ms no voltage or non-repetitive on-state 420 t=8.3ms reapplied i fsm or forward current 335 t=10ms 100% v rrm 350 t=8.3ms reapplied 470 t=10ms t j = 25 o c, 490 t=8.3ms no voltage reapplied i 2 t max. i 2 t for fusing 800 t=10ms no voltage 730 t=8.3ms reapplied 560 t=10ms 100% v rrm 510 t=8.3ms reapplied 1100 t=10ms t j = 25 o c, 1000 t=8.3ms no voltage reapplied i 2 t max. i 2 t for fusing (1) 8000 a 2 s t= 0.1 to 10ms, no voltage reappl. t j =t j max v t(to) max. value of threshold 0.92 low level (3) voltage (2) 0.95 high level (4) r t max. value of on-state 12.11 low level (3) slope resistance (2) 11.82 high level (4) v tm max. peak on-state or i tm = x i t(av) t j = 25 o c v fm forward voltage i fm = x i f(av) di/dt max. non-repetitive rate t j = 25 o c, from 0.67 v drm , of rise of turned on 150 a/s i tm = x i t(av) , i g = 500ma, current t r < 0.5 s, t p > 6 s i h max. holding current 200 t j = 25 o c, anode supply = 6v, resistive load, gate open circuit i l max. latching current 400 t j = 25 o c, anode supply = 6v, resistive load t j = t j max t j = t j max parameters irk.26 units conditions 60 (1) i 2 t for time t x = i 2 t x t x (2) average power = v t(to) x i t(av) + r t x (i t(rms) ) 2 (3) 16.7% x x i av < i < x i av (4) i > x i av on-state conduction initial t j = t j max. a a 2 s v m ? 1.95 v ma or i (rms) i (rms) electrical specifications voltage ratings type number sinusoidal half wave, initial t j = t j max.
irk.26 series 3 bulletin i27130 rev. g 10/02 www.irf.com t j junction operating temperature range t stg storage temp. range - 40 to 125 r thjc max. internal thermal resistance, junction 0.31 per module, dc operation to case r thcs typical thermal resistance case to heatsink t mounting torque 10% to heatsink busbar 3 wt approximate weight 110 (4) gr (oz) case style to-240aa jedec thermal and mechanical specifications parameters irk.26 units conditions - 40 to 125 0.1 5 (5) available with dv/dt = 1000v/ s, to complete code add s90 i.e. irkt26/16as90. c k/w nm mounting surface flat, smooth and greased i rrm max. peak reverse and i drm off-state leakage current 15 ma t j = 125 o c, gate open circuit at v rrm , v drm v ins rms isolation voltage 2500 (1 min) v 50 hz, circuit to base, all terminals 3500 (1 sec) shorted dv/dt max. critical rate of rise 500 v/ st j = 125 o c, linear to 0.67 v drm , triggering blocking p gm max. peak gate power 10 p g(av) max. average gate power 2.5 i gm max. peak gate current 2.5 a -v gm max. peak negative gate voltage 4.0 t j = - 40c 2.5 t j = 25c 1.7 t j = 125c 270 t j = - 40c 150 ma t j = 25c 80 t j = 125c v gd max. gate voltage that will not trigger i gd max. gate current that will not trigger 0.25 v 6ma anode supply = 6v resistive load v gt max. gate voltage required to trigger anode supply = 6v resistive load i gt max. gate current required to trigger w v 10 t j = 125 o c, rated v drm applied t j = 125 o c, rated v drm applied parameters irk. 26 units conditions parameters irk. 26 units conditions a mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound sine half wave conduction rect. wave conduction devices units 180 o 120 o 90 o 60 o 30 o 180 o 120 o 90 o 60 o 30 o irk.26 0.23 0.27 0.34 0.48 0.73 0.17 0.28 0.36 0.49 0.73 c/w ? r conduction (per junction) (the following table shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc)
irk.26 series 4 bulletin i27130 rev. g 10/02 www.irf.com irk t 26 / 16 a s90 device code 1 2 3 4 5 ordering information table 6 * * available with no auxiliary cathode. to specify change: 26 to 27 e.g. : irkt27/16a etc. irk.27 types with no auxiliary cathode outline table + k2 g2 - k1 g1 ~ (1) (2) (3) (4) (5) (7) (6) + - k1 g1 ~ (1) (2) (3) (4) (5) + - ~ (1) (2) (3) k2 (7) g2 (6) dimensions are in millimeters and [inches] irkt irkh irkl note: to order the optional hardware see bulletin i27900 1 - module type 2 - circuit configuration (see circuit configuration table below) 3 - current code * * 4 - voltage code (see voltage ratings table) 5 - a : gen v 6 - dv/dt code: s90 = dv/dt 1000 v/s no letter = dv/dt 500 vs irkn
irk.26 series 5 bulletin i27130 rev. g 10/02 www.irf.com fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics 80 90 100 110 120 130 0 5 10 15 20 25 30 maximum allowable case temperature (c) 30 60 90 120 180 average on-state current (a) conduction angle irk.26.. series r (dc) = 0.62 k/w thjc 80 90 100 110 120 130 0 1020304050 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period irk.26.. series r (dc) = 0.62 k/w thjc fig. 3 - on-state power loss characteristics fig. 4 - on-state power loss characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current 0 10 20 30 40 50 0 5 10 15 20 25 30 180 120 90 60 30 rms limit conduction angle maximum average on-state power loss (w) average on-state current (a) irk.26.. series per junction t = 125c j 0 10 20 30 40 50 60 70 01020304050 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w) average on-state current (a) irk.26.. series per junction t = 125c j 150 200 250 300 350 400 1 10 100 number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) initial t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j at any rated load condition and with rated v applied following surge. rrm irk.26.. series per junction 150 200 250 300 350 400 0.01 0.1 1 pulse train duration (s) versus pulse train duration. control peak half sine wave on-state current (a) initial t = 125c no voltage reapplied rated v reapplied rrm j maximum non repetitive surge current of conduction may not be maintained. irk.26.. series per junction
irk.26 series 6 bulletin i27130 rev. g 10/02 www.irf.com fig. 9 - on-state power loss characteristics fig. 8 - on-state power loss characteristics fig. 7 - on-state power loss characteristics 0 20 40 60 80 100 120 140 maximum allowable ambient temperature (c) 1 k / w 1 . 5 k / w 2 k / w r = 0 . 1 k / w - d e l t a r t h s a 0 . 3 k / w 0 . 5 k / w 4 k / w 0 . 7 k / w 3 k / w 8 k/ w 0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 180 120 90 60 30 total rms output current (a) maximum total on-state power loss (w) conduction angle irk.26.. series per module t = 125c j 0 20 40 60 80 100 120 140 maximum allowable ambient temperature (c) 1 k / w 1 . 5 k / w 0 . 2 k / w 0 . 3 k / w 0 . 5 k / w 0 . 7 k / w 3 k/ w 8 k / w r = 0 . 1 k / w - d e l t a r t h s a 0 50 100 150 200 250 0 102030405060 total output current (a) maximum total power loss (w) 180 (sine) 180 (rect) 2 x irk.26.. series single phase bridge connected t = 125c j 0 20406080100120140 maximum allowable ambient temperature (c) r = 0 . 1 k / w - d e l t a r t h s a 0 . 2 k / w 0 . 3 k / w 0. 5 k / w 0 . 7 k / w 1 k / w 1 . 5 k / w 3 k / w 0 . 4 k / w 0 50 100 150 200 250 300 350 0 1020304050607080 total output current (a) maximum total power loss (w) 120 (rect) 3 x irk.26.. series three phase bridge connected t = 125c j
irk.26 series 7 bulletin i27130 rev. g 10/02 www.irf.com fig. 10 - on-state voltage drop characteristics 1 10 100 1000 01234567 t = 25c j instantaneous on-state current (a) instantaneous on-state voltage (v) t = 125c j irk.26.. series per junction fig. 12- gate characteristics fig. 11 - thermal impedance z thjc characteristics 0.01 0.1 1 0.001 0.01 0.1 1 10 square wave pulse duration (s) steady state value: r = 0.62 k/w (dc operation) thjc thjc transient thermal impedance z (k/w) irk.26.. series 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 (b) (a) rectangular gate pulse (4) (3) (2) (1) (1) pgm = 100 w, tp = 500 s (2) pgm = 50 w, tp = 1 ms (3) pgm = 20 w, tp = 25 ms (4) pgm = 10 w, tp = 5 ms instantaneous gate current (a) instantaneous gate voltage (v) tj = -40 c tj = 25 c tj = 125 c a)recommended load line for b)recommended load line for vgd igd frequency limited by pg(av) rated di/dt: 20 v, 30 ohms tr = 0.5 s, tp >= 6 s <= 30% rated di/dt: 20 v, 65 ohms tr = 1 s, tp >= 6 s irk.26.. series
irk.26 series 8 bulletin i27130 rev. g 10/02 www.irf.com ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7309 visit us at www.irf.com for sales contact information. 10/02 data and specifications subject to change without notice. this product has been designed and qualified for industrial level. qualification standards can be found on ir's web site.
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